نوع مقاله : مقاله پژوهشی
عنوان مقاله English
نویسندگان English
Spiro-OMeTAD, a hole transport material, has garnered significant attention in perovskite solar cell research for enhancing the efficiency and stability of methylammonium lead iodide devices. In this work, using the Solar Cell Capacitance Simulator (SCAPS-1D), a FTO/Nb2O5/CH3NH3PbI3/Spiro-OMeTAD/Au structure was simulated and validated against a comparable experimental device (19.93% efficiency), showing good agreement with the simulated result. The hole transport layer properties, namely electron affinity, band gap, and interface defect densities, were then studied and optimized. The results revealed that a structure with an optimized band gap of 3.10 eV and electron affinity of 2.20 eV for the HTL can achieve a power conversion efficiency (PCE) of 23.66%, an open-circuit voltage (Voc) of 1.36 V, a fill factor (FF) of 82.67%, and a short-circuit current density (Jsc) of 20.56 mA/cm2. Furthermore, the interface defect density at the Perovskite/HTL junction was found to play a more critical role than that at the Perovskite/ETL junction in cell performance. Since only a limited number of studies have investigated perovskite solar cells employing niobium pentoxide as the electron transport layer, these simulation results are expected to guide the experimental fabrication of perovskite devices with the proposed configuration.
کلیدواژهها English
