شماره 46 - بهار 1396
ICNS7
شماره 47-تابستان 1396
فهرست

خواص مغناطیسی اکسید روی آلاییده شده با فلزات واسطه

نشریه: شماره 45- زمستان 1395 - مقاله 5   صفحات :  33 تا 37



کد مقاله:
45-05

مولفین:
الهه معینی
طیبه صیاد جنگلی: دانشگاه خوارزمی - دانشکده فیزیک
سیده ثریا موسوی


چکیده مقاله:

اکسید روی نیم‌رسانایی پرکاربرد و دارای ویژگی¬های منحصر به فرد از جمله باند ممنوعه بزرگ است که این ماده را در حوزه¬های مختلفی از علم وارد کرده است. از جمله این حوزه¬ها، «اسپینترونیک» است که امروزه توجهات زیادی را به خود جلب کرده است. در این بین اکسید روی آلاییده با فلزات واسطه خواص مغناطیسی متفاوتی از خود نشان داد که به عنوان محلول¬های مغناطیسی ضعیف در حوزه اسپینترونیک جایگاه ویژه¬ای به خود اختصاص دادند. این مقاله پس از مروری بر تئوری مغناطیسی به گزارشی از چند فلز واسطه از جمله کروم، منگنز، آهن، کبالت و نیکل به عنوان ناخالصی در اکسید روی می پردازد.


Article's English abstract:

Zinc Oxide is an applicable semiconductor and it has many unique properties like large band gap that bring it in many concepts of science. One of this concepts is "Spintronics". In this way Transition Metal doped zinc Oxide shows magnetic properties and won a special place in spintronics in terms of dilute magnetic solutions. this article review the theory of magnetism and then give a brief report of some transition metals like Chromium, Manganese, Iron, Cobalt and nickel, as impurities in zinc oxide.


کلید واژگان:
اکسید روی، فلزات واسطه، خاصیت مغناطیسی

English Keywords:
zinc oxide, transition metals, magnetic properties

منابع:

English References:
[1] C. H. Smith, “Commercial applications of spintronics technology,” Nanomaterials, pp. 1–8, 2004. [2] T. Dietl, H. Ohno, J. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science (80-. )., vol. 287, no. 5455, pp. 1019–1022, Feb. 2000. [3] P. Chuang, S.-C. Ho, L. W. Smith, F. Sfigakis, M. Pepper, C.-H. Chen, J.-C. Fan, J. P. Griffiths, I. Farrer, H. E. Beere, G. A. C. Jones, D. A. Ritchie, and T.-M. Chen, “All-electric all-semiconductor spin field-effect transistors,” Nat. Nanotechnol., vol. 10, no. 1, pp. 35–39, 2014. [4] T. Dietl, “Dilute magnetic semiconductors: Functional ferromagnets.,” Nat. Mater., vol. 2, no. 10, pp. 646–8, 2003. [5] J. K. Furdyna, “Diluted magnetic semiconductors,” J. Appl. Phys., vol. 64, no. 4, pp. R29–R64, 1988. [6] F. Pan, C. Song, X. J. Liu, Y. C. Yang, and F. Zeng, “Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films,” Mater. Sci. Eng. R Reports, vol. 62, no. 1, pp. 1–35, 2008. [7] C. Zener, “Interaction between the d shells in the transition metals,” Phys. Rev., vol. 81, no. 3, pp. 440–444, 1951. [8] Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Do?an, V. Avrutin, S. J. Cho, and H. Morko?, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys., vol. 98, no. 4, pp. 1–103, 2005. [9] C. Liu, F. Yun, and H. Morkoç, “Ferromagnetism of ZnO and GaN: A Review,” J. Mater. Sci. Mater. Electron., vol. 16, no. 9, pp. 555–597, 2005. [10] T. Story, R. R. Ga?a?zka, R. B. Frankel, and P. A. Wolff, “Carrier-concentration–induced ferromagnetism in PbSnMnTe,” Phys. Rev. Lett., vol. 56, no. 7, pp. 777–779, 1986. [11] A. K. Rajagopal and J. Callaway, “Inhomogeneous electron gas,” Phys. Rev. B, vol. 7, no. 5, pp. 1912–1919, 1973. [12] W. Kohn and L. J. Sham, “Self-Consisten Equations IncludingExchange and Correlation Effects,” Phys. Rev., vol. 140, no. 4A, pp. A1133–A1138, 1965. [13] T. Dietl, F. Matsukura, and H. Ohno, “Ferromagnetism of magnetic semiconductors--Zhang-Rice limit,” Phys. Rev. B, vol. 66, p. 33203, 2002. [14] D. M. L., Chapter 4?: Magnetic Properties of Solid Materials. 2011. [15] T. A. Abdel-Baset, Y.-W. Fang, C.-G. Duan, and M. Abdel-Hafiez, “Magnetic Properties of Chromium-Doped ZnO,” J. Supercond. Nov. Magn., vol. 29, no. 7, pp. 1937–1942, 2016. [16] T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett., vol. 75, no. 21, p. 3366, 1999. [17] S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. I. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett., vol. 80, no. 24, pp. 4561–4563, 2002. [18] Y. M. Kim, M. Yoon, I. W. Park, Y. J. Park, and J. H. Lyou, “Synthesis and magnetic properties of Zn1-xMnxO films prepared by the sol-gel method,” Solid State Commun., vol. 129, no. 3, pp. 175–178, 2004. [19] P. Sharma, A. Gupta, K. V Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. O. Guillen, B. Johansson, and G. a Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO.,” Nat. Mater., vol. 2, no. 10, pp. 673–677, 2003. [20] T. Wakano, N. Fujimura, Y. Morinaga, N. Abe, a. Ashida, and T. Ito, “Magnetic and magneto-transport properties of ZnO:Ni films,” Phys. E Low-dimensional Syst. Nanostructures, vol. 10, pp. 260–264, 2001. [21] K. Sato and H. Katayama-Yoshida, “Stabilization of ferromagnetic states by electron doping in Fe-, Co- or Ni-doped ZnO,” Japanese J. Appl. Physics, Part 2 Lett., vol. 40, no. 4 A, pp. L334–L336, 2001. [22] A. F. Jalbout, H. Chen, and S. L. Whittenburg, “Monte Carlo simulation on the indirect exchange interactions of Co-doped ZnO film,” Appl. Phys. Lett., vol. 81, no. 12, pp. 2217–2219, 2002. [23] K. Ueda, H. Tabata, and T. Kawai, “Magnetic and electric properties of transition-metal-doped ZnO films,” Appl. Phys. Lett., vol. 79, no. 7, pp. 988–990, 2001. [24] H.-J. Lee, S.-Y. Jeong, C. R. Cho, and C. H. Park, “Study of diluted magnetic semiconductor: Co-doped ZnO,” Appl. Phys. Lett., vol. 81, no. 21, p. 4020, 2002. [25] J. M. Wesselinowa and A. T. Apostolov, “A possibility to obtain room temperature ferromagnetism by transition metal doping of ZnO nanoparticles,” J. Appl. Phys., vol. 107, no. 5, 2010. [26] G. J. Huang, J. B. Wang, X. L. Zhong, G. C. Zhou, and H. L. Yan, “Synthesis, structure, and room-temperature ferromagnetism of Ni-doped ZnO nanoparticles,” J. Mater. Sci., vol. 42, no. 15, pp. 6464–6468, 2007. [27] Z. X. Cheng, X. L. Wang, S. X. Dou, K. Ozawa, H. Kimura, and P. Munroe, “Fabrication, Raman spectra and ferromagnetic properties of the transition metal doped ZnO nanocrystals,” J. Phys. D. Appl. Phys., vol. 40, no. 21, pp. 6518–6521, 2007.



فایل مقاله
تعداد بازدید: 574
تعداد دریافت فایل مقاله : 22



طراحی پرتال|طراحی پورتالطراحی پرتال (طراحی پورتال): آرانا نتورک