شماره 46 - بهار 1396
ICNS7
شماره 47-تابستان 1396
فهرست

مروری بر گرافن و کاربرد آن در ساختار ترانزیستورهای اثر میدانی

نشریه: شماره 43- تابستان 1395 - مقاله 3   صفحات :  18 تا 29



کد مقاله:
43-03

مولفین:
maedeh akbari eshkalak
حسن شاملو: دانشگاه آزاد اسلامی، واحد بوئین-زهرا، گروه مهندسی برق، بوئین-زهرا، ایران - آزاداسلامی واحد بوئین زهرا


چکیده مقاله:

بنا به قانون مور تعداد ترانزیستورهای یک تراشه در هر بازه ی زمانی دو ساله دوبرابر میشوند. تراکم فزاینده ی ترانزیستورها مشکل افزایش دمای افزاره را در پی دارد. یک راهبرد جهت غلبه بر این مشکل کوچک کردن اندازه ی ترانزیستورها است. اما کاهش مداوم اندازه سبب افت کارآیی سیلیکون شده و مشکلاتی مانند تونل زنی الکترون را به دنبال دارد. گرافن ماده ای است که تمام پتانسیل های لازم را برای آنکه بتواند جایگزین سیلیکون در صنعت تولید ادوات نیمه هادی شود دارا است. ساختار اتمی گرافن سبب بهبود خواص الکتریکی، نوری، مکانیکی و حرارتی می شود. پژوهش ها نشان میدهند که استفاده از این ماده به عنوان ماده ی کانال در ترانزیستورهای اثر میدانی منجر به بهبود عملکرد افزاره می گردد. در این نوشتار به بررسی خواص گرافن و کاربرد آن در ساختار ترانزیستورهای اثر میدانی میپردازیم.


Article's English abstract:

According to the Moore´s Law, the number of transistors on a chip will be dual every two-years . Increasing the number of transistors entails the problem of rising temperatures. One strategy to overcome this problem is the size shrinking of the transistors. But the size reduction leads to the less performance of the silicon and problems such as electrons tunneling . Graphene is a material that has all the potential necessary to be able to replace silicon in the semiconductor industry. The atomic structure of graphene improves electrical properties, optical, mechanical and heat. Studies show that using this material as the channel material in the field-effect transistors leads to performance improvement of the device. This paper examines the properties of grapheneand its application in the structure of field-effect transistors .


کلید واژگان:
گرافن، ترانزیستور اثر میدان،اثر کوانتومی هال، تونل زنی

English Keywords:
graphene, field-effect transistor, hall quantum effect, tunneling.

منابع:
ندارد

English References:
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